P/N + Description + Content Search
Part Name(s) : EMB26N10H
Excelliance MOS Corp.
Description : N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Part Name(s) : IRF151R IRF150R IRF152R IRF153R
Harris Semiconductor
Description : Avalanche Energy Rated N-Channel Power MOSFETs
Part Name(s) : 33N10
Inchange Semiconductor
Description : N-Channel MOSFET Transistor (Rev - V2)
Part Name(s) : IRF540 IRF540N
Intersil
Description : 33A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFET
Part Name(s) : IRFP140N
Fairchild Semiconductor
Description : 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET
Part Name(s) : BLF8G27LS-100V BLF8G27LS-100GV
NXP Semiconductors.
Description : Power LDMOS transistor
Part Name(s) : 2SK3836 K3836
Inchange Semiconductor
Description : N-Channel MOSFET Transistor
Part Name(s) : BUK9240-100A
Inchange Semiconductor
Description : N-Channel MOSFET Transistor
Part Name(s) : 75631P HUF75631P3
Intersil
Description : 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET
Part Name(s) : IXZR16N60 IXZR16N60A IXZR16N60B
IXYS CORPORATION
Description : NCHANNEL Enhancement Mode RF MOSFET
Part Name(s) : H12N65 H12N65E H12N65F
Hi-Sincerity Mocroelectronics
Description : N-Channel Power MOSFET (650V,12A)
Part Name(s) : STS4DNFS30L 4DFS30L
STMicroelectronics
Description : N-channel 30 V, 0.044 Ω, 4 A SO-8 STripFET™ MOSFET plus SCHOTTKY rectifier (Rev - 2011)
Part Name(s) : BLF8G27LS-100V BLF8G27LS-100GV
Ampleon
Description : Power LDMOS transistor
Part Name(s) : FX853
SANYO -> Panasonic
Description : MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode
Part Name(s) : BLF8G24LS-100V BLF8G24LS-100GV
NXP Semiconductors.
Description : Power LDMOS transistor